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Shan Qiao


Phone: 021-62511070-3303


B.S. 1979/9-1984/7   The university of science and technology of China

M.S. 1984/9-1987/7   IHEP, The institute of high energy physics, Chinese academy of sciences

Ph.D. 1993/1-1997/3 The university of Tokyo

  Work Experience  

Intern researcher, 1987/10-1991/12, China, IHEP

Assistant researcher, 1991/12-1993/1, China, IHEP

Postdoctoral Fellow, 1997/4-1999/9, Japan, The institute of physical and chemical research(Riken)

Associate Professor, 1999/10-2005/3, Japan, Hiroshima University

Professor, 2005/3-2007/3, Japan, Hiroshima University

Visiting Scientist, 2007/4-2008/4, USA, Stanford University and &Lawrence Berkeley National Lab.

Professor, 2008/5-2013/1, China, Fudan University

Professor, 2013/1-now, China, Shanghai Institute of microsystem and information technology, CAS

  Research Interest  
The development of scientific instruments, include undulators , beamlines and endstations in synchrotron radiation facility, Spin polarimeters, evaporators, liquid He temperature manipulator. The study of electronic states of novel quantum materials, particularly on spin-related electronic states. The methods include spin- and angle-resolved photoelectron spectroscopy, XMCD, XAFS, STM and electric and magnetic transport measurements.

1. Design and performance of the APPLE-Knot undulator, J. Synchrotron Rad. 22, 901–907(2015).

2. Design of a high Flux VUV beamline for low energy photons,Chinese Phys. C 39, 048001 (2015).

3. Design of a multi-channel spin polarimeter, Chinese Physics C 39, 039001 (2015).

4. Intrinsic ferromagnetism in iron doped magnetically topological insulator Fe0.015BiSbTe3, Journal of Electron Spectroscopy and Related Phenomena, 196, 130-132(2014).

5. Local structures around 3d metal dopants in topological insulator Bi2Se3 studied by EXAFS measurements, Phys. Rev. B90, 094107 (2014).

6. Carrier dependent ferromagnetism in chromium doped topological insulator Cry(BixSb1x)2yTe3,Physics Letters A 377, 1925(2013).

7. Resistivity and p–d Exchange Interaction in Cr0.2Sb(1.8-x)BixTe3, APEX 6,053003(2013).

8. Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy, Eur. Phys. J. B 75, 31-35 (2010).

9. Band Structure and Fermi surface of atomically uniform lead films, New J. Phys. 12, 113034(2010).

10. Knot undulator to generate linear polarized photons with low on-axis power density, Rev. Sci. Instrum. 80, 085108(2009).